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參數(shù)資料
| 型號(hào)： | SI9912DY-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類(lèi)： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Half-Bridge MOSFET Driver for Switching Power Supplies |
| 中文描述： | 半橋MOSFET的開(kāi)關(guān)電源驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | SI9912DY-T1-E3 |
Si9912
Vishay Siliconix
Document Number: 71311
S-40134—Rev. B, 16-Feb-04
www.vishay.com
7
Bootstrap Supply Operation
(see Functional Block Diagram)
The power to drive the high-side MOSFET (Q2) gate comes
from the bootstrap capacitor (C
BOOT
). This capacitor charges
through D1 during the time when the low-side MOSFET is on
(V
S
is at GND potential), and then provides the necessary
charge to turn on the high-side MOSFET
.
C
BOOT
should be
sized to be greater than ten times the high-side MOSFET gate
capacitance, and large enough to supply the bootstrap current
(I
BOOT
) during the high-side on time, without significant voltage
droop.
Shutdown (SD)
(shutdown input, active low)
When this pin is high, the IC operates normally. When this pin
is low, both high- and low-side MOSFETs are turned off .
Layout Considerations
There are a few critical layout considerations for these parts.
Firstly, the IC must be decoupled as closely as possible to the
power pins. Secondly the IC should be placed physically close
to the high- and low-side MOSFETs it is driving. The major
consideration is that the MOSFET gates must be charged or
discharged in a few nanoseconds, and the peak current to do
this is of the order of 1 A. This current must flow from the
decoupling and bootstrap capacitors to the IC, and from the
output driver pin to the MOSFET gate, returning from the
MOSFET source to the IC. The aim of the layout is to reduce
the parasitic inductance of these current paths as much as
possible. This is accomplished by making these traces as
short as possible, and also running trace and its current return
path adjacent to each other.
APPLICATIONS
FIGURE 1.
Typical Applications Schematic Circuit Used to Obtain Typical Rising and Falling Switching Waveforms
8
6
7
5
1
3
2
4
OUT
H
GND
IN
SD
V
S
BOOT
V
DD
OUT
L
U1
Si9912
+5 V
C2
0.1 F
PWM IN
GND
1 F
C5
C1
0.1 F
Enable
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
Q1
Si4412
Q2
Si4412
+V
DC
L1
15 H
0.1 F
C3
15 F
C4
GND
+
GND
R
LOAD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9913 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual MOSFET Bootstrapped Driver with Break-Before-Make |
| SI9913_04 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Half-Bridge MOSFET Driver for Switching Power Supplies |
| SI9913DB | 功能描述:功率驅(qū)動(dòng)器IC SMD SI9913 Kit RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9913DY | 功能描述:功率驅(qū)動(dòng)器IC Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9913DY-E3 | 功能描述:功率驅(qū)動(dòng)器IC H-Bridge MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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