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參數(shù)資料
| 型號： | SI9912DY-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Half-Bridge MOSFET Driver for Switching Power Supplies |
| 中文描述： | 半橋MOSFET的開關(guān)電源驅(qū)動器 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 95K |
| 代理商： | SI9912DY-T1-E3 |
Si9912
Vishay Siliconix
www.vishay.com
2
Document Number: 71311
S-40134—Rev. B, 16-Feb-04
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Low Side Driver Supply Voltage
V
DD
7.0
Input Voltage on IN
V
IN
0.3 to V
DD
+0.3
Shutdown Pin Voltage
V
SD
0.3 to V
DD
+0.3
V
Bootstrap Voltage
V
BOOT
35.0
High Side Driver (Bootstrap) Supply Voltage
V
BOOT
V
S
7.0
Operating Junction Temperature Range
T
J
40 to 125
C
Storage Temperature Range
T
stg
40 to 150
Power Dissipation (Note a and b)
P
D
830
mW
Thermal Impedance
JA
125
°
C/W
Lead Temperature (soldering 10 Sec)
300
°
C
Notes
a.
b.
Device mounted with all leads soldered to P.C. Board
Derate 8.3 W/ C above 25 C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Limit
Unit
Bootstrap Voltage (High-Side Drain Voltage)
V
BOOT
4.5 to 30
V
Logic Supply
V
DD
4.5 to 5.5
Bootstrap Capacitor
C
BOOT
100 n to 1
F
Ambient Temperature
T
A
40 to 85
C
SPECIFICATIONS
Test Conditions Unless Specified
Limits
Parameter
Symbol
V
= 4.5 to 5.5 V
V
BOOT
= 4.5 to 30 V, T
A
=
40 to 85 C
Min
a
Typ
b
Max
a
Unit
Power Supplies
V
DD
Supply
V
DD
4.5
I
DD
Supply
I
DD1(en)
SD = H, IN = H, V
S
= 0 V
1000
I
DD
Supply
I
DD2(en)
SD = H, IN = L, V
S
= 0 V
500
A
I
DD
Supply
I
DD3(dis)
SD = L, IN = X, V
S
= 0 V
5
I
DD
Supply
I
DD4(en)
SD = H, IN = X, V
S
= 25 V, V
BOOT
= 30 V
200
I
DD
Supply
I
DD5(dis)
I
DD(en)
I
DD(dis)
SD = L, IN = X, V
S
= 25 V, V
BOOT
= 30 V
F
IN
= 300 kHz, SD = High, Driving Si4412DY
F
IN
= 300 kHz, SD = Low, Driving Si4412DY
5
I
DD
Supply
9
mA
3
A
Boot Strap Current
I
BOOT
V
BOOT
= 30 V, V
S
= 25 V, V
OUTH
= High
0.9
3
mA
Reference Voltage
Break-Before-Make Reference Voltage
V
BBM
1.1
3
V
Logic Inputs (SD, IN)
Input High
V
IH
V
IL
0.7
V
DD
V
DD
+ 0.3
0.3
V
Input Low
0.3
V
DD
Undervoltage Lockout
V
DD
Undervoltage
V
DD
Undervoltage Hysteresis
V
UVL
V
HYST
V
DD
Rising
3.7
4.3
V
0.4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9913 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual MOSFET Bootstrapped Driver with Break-Before-Make |
| SI9913_04 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Half-Bridge MOSFET Driver for Switching Power Supplies |
| SI9913DB | 功能描述:功率驅(qū)動器IC SMD SI9913 Kit RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9913DY | 功能描述:功率驅(qū)動器IC Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9913DY-E3 | 功能描述:功率驅(qū)動器IC H-Bridge MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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