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參數(shù)資料
| 型號： | SI9912DY-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Half-Bridge MOSFET Driver for Switching Power Supplies |
| 中文描述： | 半橋MOSFET的開關(guān)電源驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 95K |
| 代理商： | SI9912DY-T1-E3 |
Si9912
Vishay Siliconix
www.vishay.com
6
Document Number: 71311
S-40134—Rev. B, 16-Feb-04
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
50
1
2
3
4
5
25
0
25
50
75
100
5
4
3
2
1
0
50
25
0
25
50
75
100
O
V
OUT(H+)
vs. Temperature
Temperature ( C)
0.0
0.5
1.0
1.5
2.0
50
25
0
25
50
75
100
5
4
3
2
1
0
50
25
0
25
50
75
100
V
OUT(H
)
vs. Temperature
V
OUT(L+)
vs. Temperature
V
OUT(L
)
vs. Temperature
O
O
O
0.5 A
1 A
0.5 A
1 A
1.5 A
2 A
0.5 A
1 A
1.5 A
2 A
0.5 A
1 A
1.5 A
2 A
Temperature ( C)
Temperature ( C)
Temperature ( C)
See Figure 3
See Figure 3
See Figure 3
See Figure 3
THEORY OF OPERATION
Break-Before-Make Function
The Si9912 has an internal break-before-make function to
ensure that both high-side and low-side MOSFETs are not
turned on at the same time. The high-side drive (OUT
H
) will not
turn on until the low-side gate drive voltage (measured at the
OUT
L
pin) is less than V
BBM
, thus ensuring that the low-side
MOSFET is turned off. The low-side drive (OUT
L
) will not turn
on until the voltage at the MOSFET half-bridge output
(measured at the V
S
pin) is less than V
BBM
, thus ensuring that
the high-side MOSFET is turned off.
Under Voltage Lockout Function
The Si9912 has an internal under-voltage lockout feature to
prevent driving the MOSFET gates when the supply voltage (at
V
DD
) is less than the under-voltage lockout specification
(V
UVL
). This prevents the output MOSFETs from being turned
on without sufficient gate voltage to ensure they are fully on.
There is hysteresis included in this feature to prevent lockout
from cycling on and off.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI9913 | Dual MOSFET Bootstrapped Driver with Break-Before-Make |
| SI9928DY | Complimentary 20-V (D-S) MOSFET |
| SI9933ADY | Dual P-Channel 20-V (D-S) MOSFET |
| SI9933DY | Dual P-Channel Enhancement-Mode MOSFET |
| SI9933BDY-T1-E3 | Dual P-Channel 2.5-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9913 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual MOSFET Bootstrapped Driver with Break-Before-Make |
| SI9913_04 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Half-Bridge MOSFET Driver for Switching Power Supplies |
| SI9913DB | 功能描述:功率驅(qū)動(dòng)器IC SMD SI9913 Kit RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9913DY | 功能描述:功率驅(qū)動(dòng)器IC Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9913DY-E3 | 功能描述:功率驅(qū)動(dòng)器IC H-Bridge MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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