參數(shù)資料
型號: SI9407AEY
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù): 2/4頁
文件大?。?/td> 56K
代理商: SI9407AEY
Si9407AEY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70742
S-99445—Rev. C, 29-Nov-99
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –-60 V, V
GS
= 0 V
–1
A
V
DS
= –-60 V, V
GS
= 0 V, T
J
= 55 C
–10
On-State Drain Current
b
I
D(on)
V
DS
–5 V, V
GS
= –10 V
–20
A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= –10 V, I
D
= 3.5 A
0.120
V
GS
= –4.5 V, I
D
= 3.1 A
0.150
Forward Transconductance
b
g
fs
V
DS
= –15 V, I
D
= –3.5 A
8
S
Diode Forward Voltage
b
V
SD
I
S
= –2.5 A, V
GS
= 0 V
–1.2
V
Dynamic
a
Total Gate Charge
Q
g
V
DS
= –30 V V
V
GS
= –10 V, I
D
= –3.5 A
10 V I
3 5 A
18
30
Gate-Source Charge
Q
gs
5
nC
Gate-Drain Charge
Q
gd
2
Turn-On Delay Time
t
d(on)
V
= –30 ,
= 30
1 A V
–1 A, V
GEN
= –10 V, R
G
= 6
8
15
Rise Time
t
r
I
D
10 V R
10
20
Turn-Off Delay Time
t
d(off)
35
50
ns
Fall Time
t
f
12
25
Source-Drain Reverse Recovery Time
t
rr
I
F
= –2.5 A, di/dt = 100 A/ s
70
100
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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