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參數(shù)資料
| 型號： | Si9410BDY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Paired Cable; Number of Conductors:24; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:12; Leaded Process Compatible:Yes; Outer Diameter:0.425"; Voltage Nom.:300V RoHS Compliant: Yes |
| 中文描述： | N溝道30 V的（副）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SI9410BDY-T1 |
FEATURES
TrenchFET Power MOSFETS
Si9410BDY
Vishay Siliconix
New Product
Document Number: 72269
S-31409—Rev. A, 07-Jul-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.024 @ V
GS
= 10 V
0.033 @ V
GS
= 4.5 V
8.1
6.9
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
D
S
Ordering Information:
Si9410BDY
Si9410BDY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
8.1
6.2
T
A
= 70 C
6.5
5.0
A
Pulsed Drain Current (10 s Pulse Width)
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
2.1
1.2
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.5
W
T
A
= 70 C
1.6
0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
40
50
Steady State
70
85
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
20
24
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI9410BDY-T1-E3 | 功能描述:MOSFET 30V 8.1A 0.024Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9410BDY-T1-GE3 | 功能描述:MOSFET 30V 8.1A 2.5W 24mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9410BDY-T1-GE3 | 制造商:Vishay Siliconix 功能描述:N CH MOSFET |
| SI9410DY | 功能描述:MOSFET 30V N-Ch FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9410DY,518 | 功能描述:MOSFET N-CH 30V 7A SOT96-1 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:TrenchMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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