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參數(shù)資料
| 型號： | SI7901EDN |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 20-V (D-S) MOSFET |
| 中文描述： | 雙P溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 52K |
| 代理商： | SI7901EDN |
TrenchFET Power MOSFETS: 1.8-V Rated
ESD Protected: 4500 V
Ultra-Low Thermal Resistance, PowerPAK
Package with Low 1.07-mm Profile
Bidirectional Switch
Si7901EDN
Vishay Siliconix
New Product
Document Number: 71430
S-03710—Rev. A, 14-May-01
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.048 @ V
GS
= –4.5 V
–6.3
–20
0.068 @ V
GS
= –2.5 V
–5.3
0.090 @ V
GS
= –1.8 V
–4.6
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
3.30 mm
3.30 mm
Bottom View
PowerPAK 1212-8
P-Channel MOSFET
S
1
D
1
G
1
3 k
P-Channel MOSFET
S
2
D
2
G
2
3 k
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
–20
Gate-Source Voltage
V
GS
12
V
T
A
= 25 C
–6.3
–4.3
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
–4.5
–3.1
Pulsed Drain Current
I
DM
–20
A
continuous Source Current (Diode Conduction)
a
I
S
–2.3
–1.1
T
A
= 25 C
2.8
1.3
Maximum Power Dissipation
a
T
A
= 85 C
P
D
1.5
0.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
35
44
Maximum Junction-to-Ambient
a
Steady State
R
thJA
75
94
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
4
5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI7901EDN-T1 | 功能描述:MOSFET 20V 6.3A 1.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7901EDN-T1-E3 | 功能描述:MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7901EDN-T1-GE3 | 功能描述:MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7902EDN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET, Common Drain |
| SI7904BDN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET |
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