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參數(shù)資料
| 型號(hào)： | SI7909DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 12-V (D-S) MOSFET |
| 中文描述： | 雙P溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 185K |
| 代理商： | SI7909DN |
Vishay Siliconix
Si7909DN
New Product
Document Number: 71996
S-51210–Rev. C, 27-Jun-05
www.vishay.com
1
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
TrenchFET
Power MOSFETS: 1.8-V Rated
New Low Thermal Resistance PowerPAK
Package
Advanced High Cell Density Process
Ultra-Low r
DS(on)
, and High P
D
Capability
APPLICATIONS
Load Switch
PA Switch
Battery Switch
Bi-Directional Switch
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
–12
0.037 @ V
GS
= –4.5 V
–7.7
0.048 @ V
GS
= –2.5 V
–6.8
0.068 @ V
GS
= –1.8 V
–5.7
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information:
Si7909DN-T1
Si7909DN–T1–E3 (Lead (Pb)–free)
P-Channel MOSFET
S
1
D
1
G
1
P-Channel MOSFET
S
2
D
2
G
2
Notes
b. See Solder Profile (http://www.vishay.com/ppg73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
not required to ensure adequate bottom side solder interconnection.c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
10 secs
Steady State
Unit
–12
±8
V
Continuous Drain Current (T
J
= 150°C)
a
T
A
= 25°C
T
A
= 85°C
I
D
–7.7
–5.5
–5.3
–3.8
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
–20
–2.3
2.8
1.5
–1.1
1.3
0.85
Maximum Power Dissipation
a
T
A
= 25°C
T
A
= 85°C
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b,c
T
J
, T
stg
–55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
35
75
4
Maximum
44
94
5
Unit
Maximum Junction-to-Ambient
a
t
≤
10 sec
Steady State
Steady State
R
thJA
°C/W
Maximum Junction-to-Case
R
thJC
Available
Pb-free
RoHS*
COMPLIANT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7909DN-T1-E3 | 功能描述:MOSFET 12V 7.7A 2.8W 37mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7909DN-T1-GE3 | 功能描述:MOSFET 12V 7.7A 2.8W 37mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7911DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET |
| SI7911DN_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET |
| SI7911DN-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET |
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