- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365556 > SI7911DN (Vishay Intertechnology,Inc.) Dual P-Channel 20-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI7911DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 20-V (D-S) MOSFET |
| 中文描述： | 雙P溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 57K |
| 代理商： | SI7911DN |
FEATURES
TrenchFET Power MOSFETS: 1.8-V Rated
New Low Thermal Resistance PowerPAK
Package
APPLICATIONS
Portable
-
PA Switch
-
Battery Switch
-
Load Switch
Si7911DN
Vishay Siliconix
New Product
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.051 @ V
GS
= -4.5 V
-5.7
-20
0.067 @ V
GS
= -2.5 V
-5.0
0.094 @ V
GS
= -1.8 V
-4.2
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
3.30 mm
3.30 mm
Bottom View
PowerPAK 1212-8
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Ordering Information: Si7911DN-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-5.7
-4.2
T
A
= 85 C
-4.1
-3.0
A
Pulsed Drain Current
I
DM
-20
continuous Source Current (Diode Conduction)
a
I
S
-2.1
-1.1
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.3
W
T
A
= 85 C
1.3
0.85
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
40
50
Steady State
75
94
C/W
Maximum Junction-to-Case
Steady State
R
thJC
5.6
7
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI7911DN-T1 | Dual P-Channel 20-V (D-S) MOSFET |
| SI7921DN | Dual P-Channel 30-V (D-S) MOSFET |
| Si7921DN-T1 | Dual P-Channel 30-V (D-S) MOSFET |
| Si7921DN-T1-E3 | Dual P-Channel 30-V (D-S) MOSFET |
| SI7923DN | Dual P-Channel 30-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7911DN_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET |
| SI7911DN-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET |
| SI7911DN-T1-E3 | 功能描述:MOSFET DUAL P-CH 20V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7911DN-T1-GE3 | 功能描述:MOSFET 20V 5.7A 2.5W 51mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7912 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。