參數(shù)資料
型號： SI7923DN
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual P-Channel 30-V (D-S) MOSFET
中文描述： 雙P溝道30V的（D-S）MOSFET
文件頁數(shù)： 1/5頁
文件大?。?/td> 69K
代理商： SI7923DN
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package
APPLICATIONS
Portable
Battery Switch
Load Switch
RoHS
COMPLIANT
Si7923DN
Vishay Siliconix
New Product
Document Number: 72622
S-51129—Rev. B, 13-Jun-05
www.vishay.com
1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.047 @ V
GS
=
10 V
6.4
0.075 @ V
GS
=
4.5 V
5
PowerPAK 1212-8
Bottom View
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
3.30 mm
3.30 mm
Ordering Information:
Si7923DN-T1—E3 (Lead (Pb)-Free)
S
G
D
P-Channel MOSFET
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.4
4.3
T
A
= 85 C
4.6
3.1
A
Pulsed Drain Current
I
DM
20
continuous Source Current (Diode Conduction)
a
I
S
2.3
1.1
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.8
1.3
W
T
A
= 85 C
1.5
0.85
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Soldering Recommendations (Peak Temperature)
b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
35
44
Steady State
75
94
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
4
5
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
http://www.vishay.com/doc73257
adequate bottom side solder interconnection.
相關(guān)PDF資料
PDF描述
Si7923DN-T1-E3 Dual P-Channel 30-V (D-S) MOSFET
SI7941DP Dual P-Channel 30-V (D-S) MOSFET
Si7943DP Dual P-Channel 30-V (D-S) MOSFET
SI7946DP-T1 Dual N-Channel 150-V (D-S) MOSFET
SI7946DP Dual N-Channel 150-V (D-S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7923DN_06 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET
SI7923DN-T1-E3 功能描述:MOSFET DUAL P-CH 30V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7923DN-T1-GE3 功能描述:MOSFET 30V 6.4A 2.8W 47mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7924 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
SI7924A 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。