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參數(shù)資料
| 型號(hào)： | SI7946DP-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 150-V (D-S) MOSFET |
| 中文描述： | 雙N溝道150 -五（副）MOSFET的 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | SI7946DP-T1 |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Dual MOSFET for Space Savings
PWM Optimized for Fast Switching
Avalanche Rated
Package
APPLICATIONS
Primary Side Switch
Si7946DP
Vishay Siliconix
New Product
Document Number: 72282
S-31361—Rev. A, 30-Jun-03
www.vishay.com
1
Dual N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
150
0.150 @ V
GS
= 10 V
0.168 @ V
GS
= 6 V
3.3
3.1
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
Ordering Information:
Si7946DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
150
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
3.3
2.1
T
A
= 70 C
2.6
1.7
Pulsed Drain Current
I
DM
10
A
Continuous Source Current (Diode Conduction)
a
I
S
2.9
1.2
Single Avalanche Current
L = 0.1 mH
I
AS
9
Single Avalanche Energy
E
AS
4
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.4
W
T
A
= 70 C
2.2
0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
26
35
Steady State
60
85
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
3.2
4.2
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI7946DP | Dual N-Channel 150-V (D-S) MOSFET |
| SI7948DP | Dual N-Channel 60-V (D-S) MOSFET |
| SI7948DP-T1 | Dual N-Channel 60-V (D-S) MOSFET |
| SI7970DP | Dual N-Channel 40-V (D-S) MOSFET |
| Si7970DP-T1-E3 | Dual N-Channel 40-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7946DP-T1-E3 | 功能描述:MOSFET DUAL N-CH 150V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7946DP-T1-GE3 | 功能描述:MOSFET 150V 3.3A 3.5W 150mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7947DP-T1 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 8.7A 8-Pin PowerPAK SO T/R |
| SI7948DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 60-V (D-S) MOSFET |
| SI7948DP-T1 | 制造商:Vishay Intertechnologies 功能描述: |
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