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參數(shù)資料
| 型號： | SI7970DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 40-V (D-S) MOSFET |
| 中文描述： | 雙N溝道40 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 72K |
| 代理商： | SI7970DP |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Dual MOSFET for Space Savings
100% R
g
Tested
Package
APPLICATIONS
Primary Side Switch
Low Power Quarter Buck
Intermediate BUS Switch
Si7970DP
Vishay Siliconix
New Product
Document Number: 72826
S-40431—Rev. A, 15-Mar-04
www.vishay.com
1
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
40
0.019 @ V
GS
= 10 V
0.026 @ V
GS
= 4.5 V
10.2
8.7
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
Ordering Information: Si7970DP-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
10.2
6.5
T
A
= 70 C
8.2
5.2
Pulsed Drain Current
I
DM
40
A
Continuous Source Current (Diode Conduction)
a
I
S
2.9
1.2
Single Avalanche Current
L = 0.1 mH
I
AS
30
Single Avalanche Energy
E
AS
45
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.4
W
T
A
= 70 C
2.2
0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
26
35
Steady State
60
85
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
2.2
2.7
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI7970DP-T1-E3 | 功能描述:MOSFET 40V 10.2A 3.5W 19mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7971DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET |
| SI7973DP-T1-E3 | 功能描述:MOSFET 12V 12.8A 1.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7973DP-T1-GE3 | 功能描述:MOSFET 12V 12.8A 3.5W 15mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7980DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode |
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