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參數(shù)資料
| 型號： | SI8405DB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | 12-V P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | 12 - V P -通道的1.8 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 83K |
| 代理商： | SI8405DB |
FEATURES
TrenchFET Power MOSFET
New MICRO FOOT Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
APPLICATIONS
PA, Battery and Load Switch
Battery Charger Switch
Si8405DB
Vishay Siliconix
Document Number: 71814
S-20804—Rev. C, 01-Jul-02
www.vishay.com
1
12-V P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.055 @ V
GS
= -4.5 V
-4.9
-12
0.070 @ V
GS
= -2.5 V
-4.4
0.090 @ V
GS
= -1.8 V
-4.0
MICRO FOOT
S
G
D
P-Channel MOSFET
3
2
4
1
S
D
D
G
Bump Side View
Backside View
Device Marking: 8405
xxx = Date/Lot Traceability Code
8405
xxx
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-4.9
-3.6
T
A
= 70 C
-3.9
-2.8
A
Pulsed Drain Current
I
DM
-10
continuous Source Current (Diode Conduction)
a
I
S
-2.5
-1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.77
1.47
W
T
A
= 70 C
1.77
0.94
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
Package Reflow Conditions
b
VPR
215
C
IR/Convection
220
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
5 sec
R
thJA
35
45
Steady State
72
85
C/W
Maximum Junction-to-Foot (drain)
Steady State
R
thJF
16
20
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI8405DB-T1 | 制造商:Vishay Intertechnologies 功能描述: |
| SI8405DB-T1-E1 | 功能描述:MOSFET 12V 4.9A 2.77W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI8405DB-T1-E3 | 功能描述:MOSFET 12V 4.9A 2.77W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI-8405L | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Separate Excitation Switching Type with Coil |
| SI-8405NH | 制造商:ALLEGRO 制造商全稱:Allegro MicroSystems 功能描述:Surface-Mount, Synchronous Rectifier Step-down Switching Mode Regulator Control ICs |
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