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參數(shù)資料
| 型號： | SI8407DB-T2-E1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 69K |
| 代理商： | SI8407DB-T2-E1 |
FEATURES
TrenchFET Power MOSFET
New MICRO FOOT Chipscale Packaging
Provides Ultra-Low Footprint Area Profile
(0.62 mm) and On-Resistance
APPLICATIONS
Portable Devices
PA Switch
Battery Switch
Load Switch
Si8407DB
Vishay Siliconix
Document Number: 72254
S-50066—Rev. B, 17-Jan-05
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.027 @ V
GS
=
4.5 V
8.2
20
0.032 @ V
GS
=
2.5 V
7.5
0.045 @ V
GS
=
1.8 V
6.6
MICRO FOOT
Device Marking: 8407
xxx = Date/Lot Traceability Code
Bump Side View
Backside View
D
D
G
S
S
S
1
2
6
3
5
4
Ordering Information: Si8407DB-T2
Si8407DB-T2—E1 (Lead (Pb)-Free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
8.2
5.8
T
A
= 70 C
6.5
4.6
A
Pulsed Drain Current
I
DM
15
continuous Source Current (Diode Conduction)
a
I
S
2.6
1.34
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.9
1.47
W
T
A
= 70 C
1.86
0.94
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Package Reflow Conditions
b
VPR
215
C
IR/Convection
220
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
33
43
Steady State
72
85
C/W
Maximum Junction-to-Foot (drain)
Steady State
R
thJF
15
19
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
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