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參數(shù)資料
| 型號： | SI3443DVPBF |
| 廠商： | InterFET Corporation |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 118K |
| 代理商： | SI3443DVPBF |
FEATURES
TrenchFET Power MOSFET
New MICRO FOOT Chipscale Packaging
Reduces Footprint Area, Profile (0.62 mm) and
On-Resistance Per Footprint Area
Pin Compatible to Si8401DB
APPLICATIONS
Load Switch, Battery Switch, and PA Switch for
Portable Devices
Si8409DB
Vishay Siliconix
New Product
Document Number: 73111
S-41816—Rev. A, 11-Oct-04
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
30
0.046 @ V
GS
=
4.5 V
6.3
17
0.065 @ V
GS
=
2.5 V
5.3
MICRO FOOT
3
2
4
1
S
D
D
G
Bump Side View
Backside View
Device Marking: 8409
xxx = Date/Lot Traceability Code
8409
xxx
Ordering Information: Si8409DB-T1—E1
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.3
4.6
T
A
= 70 C
5.1
3.7
A
Pulsed Drain Current
I
DM
25
continuous Source Current (Diode Conduction)
a
I
S
2.5
1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.77
1.47
W
T
A
= 70 C
1.77
0.94
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
Package Reflow Conditions
b
VPR
215
C
IR/Convection
220
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
35
45
Steady State
72
85
C/W
Maximum Junction-to-Foot (drain)
Steady State
R
thJF
16
20
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
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