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參數資料
| 型號： | SI7806BDN |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) Fast Switching MOSFET |
| 中文描述： | N溝道30 V的（副）快速開關MOSFET |
| 文件頁數： | 6/6頁 |
| 文件大?。?/td> | 113K |
| 代理商： | SI7806BDN |
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Document Number: 91000
Revision: 08-Apr-05
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
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PDF描述 |
|---|---|
| SI7806BDN-T1-E3 | N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7840BDP | Si7840BDP vs. Si7840DP Specification Comparison |
| SI7840DP | N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7844DP | Dual N-Ch MOSFET plus Schottky diode, |
| SI7850DP | N-Channel 60-V (D-S) Fast Switching MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7806BDN-T1-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7806DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7806DN-T1-E3 | 功能描述:MOSFET 30V 14.4A 3.8W 11mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7808 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator |
| SI7809 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator |
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