參數(shù)資料
型號(hào)： SI7804DN-T1-E3
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 30-V (D-S) Fast Switching MOSFET
中文描述： N溝道30 V的（副）快速開關(guān)MOSFET
文件頁數(shù)： 1/5頁
文件大小： 66K
代理商： SI7804DN-T1-E3
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
100% R
g
Tested
APPLICATIONS
DC/DC Conversion
RoHS
COMPLIANT
Si7804DN
Vishay Siliconix
Document Number: 72317
S-51129—Rev. D, 13-Jun-05
www.vishay.com
1
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.0185 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
10
8
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7804DN-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
10
6.5
T
A
= 70 C
7.5
5.0
A
Pulsed Drain Current
I
DM
40
Continuous Source Current (Diode Conduction)
a
I
S
2.9
1.2
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.5
W
T
A
= 70 C
1.9
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Soldering Recommendations (Peak Temperature)
b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
28
35
Steady State
65
81
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
4.5
6.0
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
http://www.vishay.com/doc73257
adequate bottom side solder interconnection.
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