- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365555 > SI7806DN (Vishay Intertechnology,Inc.) N-Channel 30-V (D-S) Fast Switching MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI7806DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) Fast Switching MOSFET |
| 中文描述： | N溝道30 V的（副）快速開關MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 54K |
| 代理商： | SI7806DN |
FEATURES
TrenchFET Power MOSFET
PWM Optimized
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
DC/DC Converters
– Secondary Synchronous Rectifier
– High-Side MOSFET in Synchronous Buck
Si7806DN
Vishay Siliconix
New Product
Document Number: 71869
S-20805—Rev. A, 17-Jun-02
www.vishay.com
1
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.011 @ V
GS
= 10 V
0.0175 @ V
GS
= 4.5 V
14.4
30
12.6
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
14.4
9.2
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
11.6
7.4
A
Pulsed Drain Current
I
DM
40
Continuous Source Current (Diode Conduction)
a
I
S
3.2
1.3
A
T
A
= 25 C
3.8
1.5
Maximum Power Dissipation
a
T
A
= 70 C
P
D
2.0
0.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
24
33
Maximum Junction-to-Ambient
a
Steady State
R
thJA
65
81
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.9
2.4
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關PDF資料 |
PDF描述 |
|---|---|
| Si7810DN | 30V N-Channel PowerTrench MOSFET |
| SI7820DN | N-Channel 200-V (D-S) MOSFET |
| Si7820DN-T1-E3 | N-Channel 200-V (D-S) MOSFET |
| SI7842DP | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI7846DP | N-Channel 150-V (D-S) MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI7806DN-T1-E3 | 功能描述:MOSFET 30V 14.4A 3.8W 11mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7808 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator |
| SI7809 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator |
| SI7810 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator |
| SI7810DN | 制造商:Vishay Siliconix 功能描述:MOSFET N POWERPAK |
發(fā)布緊急采購，3分鐘左右您將得到回復。