參數(shù)資料
型號(hào)： Si7820DN-T1-E3
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 200-V (D-S) MOSFET
中文描述： N溝道200 -五（副）MOSFET的
文件頁數(shù)： 1/5頁
文件大?。?/td> 79K
代理商： SI7820DN-T1-E3
FEATURES
PWM-Optimized TrenchFET Power MOSFET
100% R
g
Tested
Avalanche Tested
APPLICATIONS
Primary Side Switch
Telecom Power Supplies
Distributed Power Architectures
Miniature Power Modules
Si7820DN
Vishay Siliconix
New Product
Document Number: 72581
S-32411—Rev. B, 24-Nov-03
www.vishay.com
1
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
200
0.240 @ V
GS
= 10 V
0.250 @ V
GS
= 6 V
2.6
2.5
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
N-Channel MOSFET
G
D
S
Ordering Information: Si7820DN-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
200
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
2.6
1.7
T
A
= 70 C
2.1
1.3
A
Pulsed Drain Current
I
DM
10
Continuous Source Current (Diode Conduction)
a
I
S
3.2
1.3
Single Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
3.5
Single Avalanche Energy
E
AS
0.6
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.8
1.5
W
T
A
= 70 C
2.0
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
26
33
Steady State
65
81
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.9
2.4
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI7842DP Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7820DN-T1-GE3 功能描述:MOSFET 200V 2.6A 3.8W 240mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7824 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator
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SI7840BDP-T1-E3 功能描述:MOSFET 30V 14A 4.1W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7840BDP-T1-GE3 功能描述:MOSFET 30V 16.5A 4.1W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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