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參數(shù)資料
| 型號： | SI7703EDN |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 54K |
| 代理商： | SI7703EDN |
TrenchFET Power MOSFETS: 1.8-V Rated
ESD Protected: 4500 V
Ultra-Low Thermal Resistance, PowerPAK
Package with Low 1.07-mm Profile
Charger Switching
Si7703EDN
Vishay Siliconix
New Product
Document Number: 71429
S-03709—Rev. A, 14-May-01
www.vishay.com
1
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.048 @ V
GS
= –4.5 V
0.068 @ V
GS
= –2.5 V
0.090 @ V
GS
= –1.8 V
–6.3
–20
–5.3
–4.6
V
KA
(V)
V
f
(V)
Diode Forward Voltage
I
F
(A)
20
0.48 V @ 0.5 A
1.0
K
A
1
2
3
4
5
6
7
8
A
A
S
G
K
K
D
D
3.30 mm
3.30 mm
Bottom View
PowerPAK 1212-8
P-Channel MOSFET
S
D
G
3 k
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage (MOSFET and Schottky)
V
DS
V
KA
–20
Reverse Voltage (Schottky)
20
V
Gate-Source Voltage (MOSFET)
V
GS
12
12
T
A
= 25 C
–6.3
–4.3
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a
T
A
= 85 C
I
D
–4.5
–3.1
Pulsed Drain Current (MOSFET)
I
DM
I
S
I
F
I
FM
–20
Continuous Source Current (MOSFET Diode Conduction)
a
–2.3
–1.1
A
Average Foward Current (Schottky)
1.0
Pulsed Foward Current (Schottky)
7
T
A
= 25 C
T
A
= 85 C
T
A
= 25 C
T
A
= 85 C
2.8
1.3
Maximum Power Dissipation (MOSFET)
a
1.5
0.7
P
D
2.0
1.1
W
Maximum Power Dissipation (Schottky)
a
1.0
0.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Surface Mounted on 1” x1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7703EDN_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Single P-Channel 20-V (D-S) MOSFET With Schottky Diode |
| SI7703EDN-T1 | 功能描述:MOSFET 20V 6.3A 2.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7703EDN-T1-E3 | 功能描述:MOSFET 20V 6.3A 2.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7703EDN-T1-GE3 | 功能描述:MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7705DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Single P-Channel 20-V (D-S) MOSFET With Schottky Diode |
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