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參數(shù)資料
| 型號： | SI7540DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N- and P-Channel 12-V (D-S) MOSFET |
| 中文描述： | N和P溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | SI7540DP |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK Package with
Low 1.07-mm Profile
PWM Optimized for High Efficiency
APPLICATIONS
Point-of-Load Synchronous Rectifier
- 5-V or 3.3-V BUS Step Down
- Q
g
Optimized for 500-kHz Operation
Synchronous Buck, Shoot-Thru Resistant
Si7540DP
Vishay Siliconix
New Product
Document Number: 71911
S-22387—Rev.. C, 16-Dec-02
www.vishay.com
1
N- and P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.017 @ V
GS
= 4.5 V
11.8
N-Channel
12
0.025 @ V
GS
= 2.5 V
9.8
0.032 @ V
GS
= -4.5 V
-8.9
P-Channel
-12
0.053 @ V
GS
= -2.5 V
-6.9
N-Channel MOSFET
D
1
G
1
S
1
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
S
2
G
2
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
12
-12
Gate-Source Voltage
V
GS
8
8
V
T
A
= 25 C
11.8
7.6
- 8.9
-5.7
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
9.5
6.1
-7.1
-4.6
Pulsed Drain Current
I
DM
20
A
Continuous Source Current (Diode Conduction)
a
I
S
2.9
1.1
-2.9
-1.1
T
A
= 25 C
3.5
1.4
3.5
1.4
Maximum Power Dissipation
a
T
A
= 70 C
P
D
2.2
0.9
2.2
0.9
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
t
10 sec
26
35
26
35
Maximum Junction-to-Ambient
a
Steady State
R
thJA
60
85
60
85
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
3.9
5.5
3.9
5.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7540DP_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 12-V (D-S) MOSFET |
| SI7540DP-T1 | 功能描述:MOSFET 12V 11.8/8.9A 1.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7540DP-T1-E3 | 功能描述:MOSFET N-and P-CHANNEL 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7540DP-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI7540DP-T1-GE3 | 功能描述:MOSFET N/P-Ch MOSFET 12V 17/32mohomS@4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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