- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368618 > SI7403DN (Vishay Intertechnology,Inc.) P-Channel 20-V (D-S) MOSFET, Low-Threshold PDF資料下載
參數(shù)資料
| 型號(hào)： | SI7403DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長(zhǎng)）MOSFET的低閾值 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | SI7403DN |
Si7403DN
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71431
S-03390
—
Rev. A, 02-Apr-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
–
0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
4.5 V
100
nA
V
DS
=
–
20 V, V
GS
= 0 V
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
20 V, V
GS
= 0 V, T
J
= 70 C
–
5
A
V
DS
=
–
5 V, V
GS
=
–
4.5 V
–
10
On-State Drain Current
a
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
2.5 V
–
4
A
V
GS
=
–
4.5 V, I
D
=
–
3.3 A
0.078
0.1
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
–
2.5 V, I
D
=
–
2.9 A
0.110
0.135
Forward Transconductance
a
g
fs
V
DS
=
–
10 V, I
D
=
–
3.3 A
8.8
S
Diode Forward Voltage
a
V
SD
I
S
=
–
1.6 A, V
GS
= 0 V
0.8
–
1.2
V
Dynamic
b
Total Gate Charge
Q
g
8.6
14
Gate-Source Charge
Q
gs
V
DS
=
–
10 V,
V
GS
=
–
4.5 V, I
D
=
–
4.5 A
1.5
nC
Gate-Drain Charge
Q
gd
3.1
Turn-On Delay Time
t
d(on)
27
50
Rise Time
t
r
V
=
–
10 V, R
L
= 10
–
1.6 A, V
GEN
=
–
4.5 V, R
G
= 6
17
30
Turn-Off Delay Time
t
d(off)
I
D
52
80
ns
Fall Time
t
f
45
70
Source-Drain Reverse Recovery Time
t
rr
I
F
=
–
1.6 A, di/dt = 100 A/ s
50
80
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
4
8
12
16
20
0
1
2
3
4
5
0
4
8
12
16
20
0
1
2
3
4
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
V
GS
–
Gate-to-Source Voltage (V)
–
I
V
GS
= 4.5, 4, 3.5 V
1.5 V
2 V
2.5 V
3 V
T
C
=
–
55 C
125 C
25 C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI7407DN | P-Channel 12-V (D-S) MOSFET |
| SI7413DN | P-Channel 20-V (D-S) MOSFET |
| SI7413DN-T1-E3 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI7439DP | P-Channel 150-V (D-S) MOSFET |
| Si7439DP-T1-E3 | P-Channel 150-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7403DN-T1 | 功能描述:MOSFET 20V 4.5A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7404DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7404DN-T1 | 功能描述:MOSFET 30V 13.3A 3.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7404DN-T1-E3 | 功能描述:MOSFET 30V 13.3A 3.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7404DN-T1-GE3 | 功能描述:MOSFET 30V 13.3A 3.8W 13mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。