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參數(shù)資料
| 型號： | SI6975DQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 12-V (D-S) MOSFET |
| 中文描述： | 雙P溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 50K |
| 代理商： | SI6975DQ |
Si6975DQ
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71319
S-02318
—
Rev. A, 23-Oct-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
5 mA
–
0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
V
DS
=
–
9.6 V, V
GS
= 0 V
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
9.6 V, V
GS
= 0 V, T
J
= 70 C
–
25
A
On-State Drain Current
a
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
4.5 V
–
20
A
V
GS
=
–
4.5 V, I
D
=
–
5.1 A
0.022
0.027
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
–
2.5 V, I
D
=
–
4.5
A
0.028
0.035
V
GS
=
–
1.8 V, I
D
=
–
3.9
A
0.037
0.046
Forward Transconductance
a
g
fs
V
DS
=
–
5 V, I
D
=
–
5.1 A
20
S
Diode Forward Voltage
a
V
SD
I
S
=
–
1.0 A, V
GS
= 0 V
–
0.65
–
1.1
V
Dynamic
b
Total Gate Charge
Q
g
23
30
Gate-Source Charge
Q
gs
V
DS
=
–
6 V,
V
GS
=
–
4.5 V, I
D
=
–
5.1 A
3.0
nC
Gate-Drain Charge
Q
gd
4.3
Turn-On Delay Time
t
d(on)
25
40
Rise Time
t
r
V
=
–
6 V, R
= 6
–
1 A, V
GEN
=
–
4.5 V, R
G
= 6
32
50
Turn-Off Delay Time
t
d(off)
I
D
96
140
ns
Fall Time
t
f
62
95
Source-Drain Reverse Recovery Time
t
rr
I
F
=
–
1.0 A, di/dt = 100 A/ s
60
100
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
T
C
=
–
55 C
125 C
25 C
Transfer Characteristics
V
GS
–
Gate-to-Source Voltage (V)
–
I
D
0
6
12
18
24
30
0
2
4
6
8
10
V
GS
= 5 thru 2.5 V
Output Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
2 V
0.5, 1 V
1.5 V
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| SI6975DQ-T1 | 功能描述:MOSFET 12V 5.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6975DQ-T1-E3 | 功能描述:MOSFET 12V 5.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| SI6981DQ_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 1.8-V (G-S) MOSFET |
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