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參數(shù)資料
| 型號(hào)： | SI6973DQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | 雙P溝道的1.8 V（GS）的MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 66K |
| 代理商： | SI6973DQ |
Si6973DQ
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 71190
S-01058—Rev. A, 22-May-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –16 V, V
GS
= 0 V
–1
A
V
DS
= –16 V, V
GS
= 0 V, T
J
= 70 C
–25
On-State Drain Current
a
I
D(on)
V
DS
= –5 V, V
GS
= –4.5 V
–20
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= –4.5 V, I
D
= –4.8 A
0.025
0.030
r
DS(on)
V
GS
= –2.5 V, I
D
= –4.2
A
0.033
0.039
V
GS
= –1.8 V, I
D
= –3.5
A
0.046
0.055
Forward Transconductance
a
g
fs
V
DS
= –5 V, I
D
= –4.8 A
21
S
Diode Forward Voltage
a
V
SD
I
S
= –1.0 A, V
GS
= 0 V
–0.65
–1.1
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= –10 V V
V
GS
= –4.5 V, I
D
= –4.8 A
4 5 V I
4 8 A
21
30
Gate-Source Charge
Q
gs
4.4
nC
Gate-Drain Charge
Q
gd
3.3
Turn-On Delay Time
t
d(on)
V
= –10 ,
= 10
1 A V
–1 A, V
GEN
= –4.5 V, R
G
= 6
27
40
Rise Time
t
r
I
D
4 5 V R
27
40
Turn-Off Delay Time
t
d(off)
93
140
ns
Fall Time
t
f
43
65
Source-Drain Reverse Recovery Time
t
rr
I
F
= –1.0 A, di/dt = 100 A/ s
30
50
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
6
12
18
24
30
0
0.5
1.0
1.5
2.0
2.5
3.0
0
6
12
18
24
30
0
3
6
9
12
V
GS
= 5 thru 2.5 V
T
C
= –55 C
125 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
–
I
D
V
GS
– Gate-to-Source Voltage (V)
–
I
D
2 V
0.5, 1 V
1.5 V
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| SI6973DQ-T1 | 功能描述:MOSFET 20V 4.8A 4.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6973DQ-T1-E3 | 功能描述:MOSFET 20V 4.8A 4.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6973DQ-T1-GE3 | 功能描述:MOSFET 20V 4.8A 1.14W 30mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6975DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET |
| SI6975DQ-T1 | 功能描述:MOSFET 12V 5.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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