參數(shù)資料
型號: SI6967DQ
廠商: Vishay Intertechnology,Inc.
英文描述: Dual P-Channel 1.8-V (G-S) MOSFET
中文描述: 雙P溝道的1.8 V(GS)的MOSFET的
文件頁數(shù): 1/4頁
文件大?。?/td> 53K
代理商: SI6967DQ
Si6967DQ
Vishay Siliconix
Document Number: 70811
S-59525—Rev. C, 12-Oct-98
www.vishay.com FaxBack 408-970-5600
2-1
Dual P-Channel 1.8-V (G-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.030 @ V
GS
= –4.5 V
0.045 @ V
GS
= –2.5 V
0.070 @ V
GS
= –1.8 V
5.0
–8
4.0
3.0
Si6967DQ
D
1
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
2
S
2
S
2
G
2
TSSOP-8
Top View
S
1
G
1
D
1
S
2
G
2
D
2
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
–8
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
I
D
5.0
A
T
A
= 70 C
4.0
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
30
–1.25
Maximum Power Dissipation
a, b
T
A
= 25 C
T
A
= 70 C
P
D
1.1
W
0.72
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
110
C/W
Steady State
115
Notes
a.
b.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Surface Mounted on FR4 Board.
t
10 sec.
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