參數(shù)資料
型號(hào)： Si7120DN
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 60-V (D-S) MOSFET
中文描述： N通道60 - V（下局副局長(zhǎng)）MOSFET的
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 67K
代理商： SI7120DN
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance
PowerPAK 1212-8 Package with
Low 1.07-mm Profile
100% R
g
Tested
APPLICATIONS
Primary Side Switch
Synchronous Rectification
RoHS
COMPLIANT
Available
Si7120DN
Vishay Siliconix
Document Number: 72771
S-51128—Rev. D, 13-Jun-05
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
60
0.019 @ V
GS
= 10 V
0.028 @ V
GS
= 4.5 V
10
8.2
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
N-Channel MOSFET
G
D
S
Ordering Information:
Si7120DN-T1
Si7120DN-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
10
6.3
T
A
= 70 C
8.0
5.1
A
Pulsed Drain Current
I
DM
40
Continuous Source Current (Diode Conduction)
a
I
S
3.2
1.3
Single Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
22
Single Avalanche Energy
E
AS
24
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.8
1.5
W
T
A
= 70 C
2.4
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Soldering Recommendations (Peak Temperature)
b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
26
33
Steady State
65
81
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.9
2.4
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
http://www.vishay.com/doc73257
adequate bottom side solder interconnection.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7120DN-T1 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 6.3A 8-Pin PowerPAK 1212 T/R
SI7120DN-T1-E3 功能描述:MOSFET 60V 10A 0.019Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7120DN-T1-GE3 功能描述:MOSFET 60V 10A 3.8W 19mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7121DN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI7121DN-T1-GE3 功能描述:MOSFET 30V 16A 52W 1.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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