參數(shù)資料
型號(hào)： SI7136DP-RC
廠商： Vishay Intertechnology,Inc.
英文描述： R-C Thermal Model Parameters
中文描述： 遙控模型參數(shù)熱
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 185K
代理商： SI7136DP-RC
Vishay Siliconix
Si7136DP_RC
Document Number: 73741
Revision 16-Jan-06
www.vishay.com
1
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RT1
RT2
RT3
RT4
Ambient
2.0963
9.0488
8.0177
50.6165
Case
2.3554 m
690.6627 m
1.6922
820.2806 m
Foot
N/A
N/A
N/A
N/A
Thermal Capacitance (Joules/°C)
Junction to
CT1
CT2
CT3
CT4
Ambient
24.2344 m
558.7573 m
70.7495 m
1.4435
Case
Foot
136.5785 u
595.8486 u
9.9128 m
8.8712 m
N/A
N/A
N/A
N/A
相關(guān)PDF資料
PDF描述
SI7200E SENSOR 5PSIG 1/2NPT .5-4.5V 12,3
SI7230E SENSOR 30PSIG 1/2NPT .5-4.5V 12,3
SI-7200E STEPPING MOTOR DRIVER
SI-7230E STEPPING MOTOR DRIVER
SI7220DN Dual N-Channel 60-V (D-S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7136DP-T1-E3 功能描述:MOSFET 20V 30A 39W 3.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7136DP-T1-GE3 功能描述:MOSFET 20V 30A 39W 3.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7137DP 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
SI7137DP-T1-GE3 功能描述:MOSFET -20V 1.95mOhm@10V 60A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7138DP-T1-E3 功能描述:MOSFET 60V 30A 96W 7.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*