參數(shù)資料
型號： SI7220DN
廠商： Vishay Intertechnology,Inc.
英文描述： Dual N-Channel 60-V (D-S) MOSFET
中文描述： 雙N溝道60 - V（下局副局長）MOSFET的
文件頁數(shù)： 1/5頁
文件大?。?/td> 70K
代理商： SI7220DN
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance
PowerPAK Package,
1
/
3
the Space
of An SO-8 While Thermally Comparable
APPLICATIONS
Synchronous Rectification
Primary Side Switch
RoHS
COMPLIANT
Si7220DN
Vishay Siliconix
Document Number: 73117
S-51128—Rev. B, 13-Jun-05
www.vishay.com
1
Dual N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
60
0.060 @ V
GS
= 10 V
0.075 @ V
GS
= 4.5 V
4.8
13
4.3
PowerPAK 1212-8
Bottom View
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
3.30 mm
3.30 mm
Ordering Information: Si7220DN-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
1
D
1
S
1
N-Channel MOSFET
G
D
2
S
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
3.4
T
A
= 70 C
3.8
2.7
A
Pulsed Drain Current
I
DM
20
Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
11
Single Avalanche Energy
E
AS
6.1
mJ
Continuous Source Current (Diode Conduction)
a
I
S
2.2
1.1
A
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.6
1.3
W
T
A
= 70 C
1.4
0.69
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Soldering Recommendations (Peak Temperature)
b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
38
48
Steady State
77
94
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
4.3
5.4
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
http://www.vishay.com/doc73257
adequate bottom side solder interconnection.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7220DN_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 60-V (D-S) MOSFET
SI7220DN-T1-E3 功能描述:MOSFET DUAL N-CH 60V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7220DN-T1-GE3 功能描述:MOSFET Dual N-Ch MOSFET 60V 60mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7222DN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 40 V (D-S) MOSFET
SI7222DN-T1-E3 功能描述:MOSFET 40V 6.0/5.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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