參數(shù)資料
型號(hào): SI6862DQ
廠商: Vishay Intertechnology,Inc.
英文描述: Dual N-Channel 20-V (D-S) MOSFET with Current Sense
中文描述: 雙N溝道20 - V(下副秘書(shū)長(zhǎng))與MOSFET的電流檢測(cè)
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 100K
代理商: SI6862DQ
Si6862DQ
Vishay Siliconix
New Product
Document Number: 71145
S-00717—Rev. B, 03-Apr-00
www.vishay.com FaxBack 408-970-5600
2-1
Dual N-Channel 20-V (D-S) MOSFET with Current Sense
V
DS
(V)
r
DS(on)
( )
I
D
(A)
20
0.026 @ V
GS
= 4.5 V
0.036 @ V
GS
= 2.5 V
6.6
5.6
Si6862DQ
D
S
1
SENSE
1
G
1
2
3
4
8
7
6
5
D
S
2
SENSE
2
KELVIN
TSSOP-8
Top View
G
S
SENSE
2
D
KELVIN
S
1
SENSE
1
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.6
5.2
A
T
A
= 70 C
5.2
4.2
Pulsed Drain Current (10 s Pulse Width)
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
1.5
0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
1.8
1.1
W
T
A
= 70 C
1.1
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
55
70
C/W
Steady State
93
110
Maximum Junction-to-Foot
Steady State
R
thJF
36
45
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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