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參數(shù)資料
| 型號： | SI6875DQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | SI6875DQ |
Si6875DQ
Vishay Siliconix
New Product
Document Number: 71230
S-01235—Rev. A, 12-Jun-00
www.vishay.com FaxBack 408-970-5600
2-1
Dual P-Channel 20-V (D-S) MOSFET, Common Drain
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.027 @ V
GS
= –4.5 V
–6.4
–20
0.036 @ V
GS
= –2.5 V
–5.5
0.052 @ V
GS
= –1.8 V
–4.6
Si6875DQ
D
1
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
2
S
2
S
2
G
2
TSSOP-8
Top View
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
–20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
–6.4
–5.2
A
T
A
= 70 C
–5.1
–4.1
Pulsed Drain Current (10 s Pulse Width)
I
DM
–30
Continuous Source Current (Diode Conduction)
a
I
S
–1.6
–1.08
Maximum Power Dissipation
a
T
A
= 25 C
P
D
1.78
1.19
W
T
A
= 70 C
1.14
0.76
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
55
70
C/W
Steady State
85
105
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
35
45
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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