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參數(shù)資料
| 型號： | SI6924EDQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 2.5-V (G-S) Battery Switch, ESD Protection |
| 中文描述： | N溝道的2.5 V（GS）的電池開關(guān)，ESD保護 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 49K |
| 代理商： | SI6924EDQ |
ESD Protected
2000 V
Si6924EDQ
Vishay Siliconix
Document Number: 70814
S-59522—Rev. C, 30-Nov-98
www.vishay.com
1
N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.033 @ V
GS
= 4.5 V
0.038 @ V
GS
= 3.0 V
0.042 @ V
GS
= 2.5 V
4.6
28
4.3
4.1
FEATURES
Low r
DS(on)
V
GS
Max Rating: 14 V
Exceeds 2-kV ESD Protection
Low Profile TSSOP-8 Package
r
DS(on)
Rating at 2.5-V V
GS
28-V V
DS
Rated
Symetrical Voltage Blocking (Off Voltage)
DESCRIPTION
The Si6924EDQ is a dual n-channel MOSFET with ESD
protection and gate over-voltage protection circuitry
incorporated into the MOSFET. The device is designed for use
in Lithium Ion battery pack circuits. The common-drain
contsruction takes advantage of the typical battery pack
topology, allowing a further reduction of the device’s
on-resistance. The 2-stage input protection circuit is a unique
design, consisting of two stages of back-to-back zener diodes
separated by a resistor. The first stage diode is designed to
absorb most of the ESD energy. The second stage diode is
designed to protect the gate from any remaining ESD energy
and over-voltages above the gates inherent safe operating
range. The series resistor used to limit the current through the
second stage diode during over voltage conditions has a
maximum value which limits the input current to
14 V and the maximum t
off
to 12 s. The Si6924EDQ has been
optimized as a battery or load switch in Lithium Ion applications
with the advantage of both a 2.5-V r
DS(on)
rating and a safe
14-V gate-to-source maximum rating.
10 mA @
APPLICATION CIRCUITS
FIGURE 1.
Typical Use In a Lithium Ion Battery Pack
FIGURE 2.
Input ESD and Overvoltage Protection
Circuit.
G
R**
S
D
**R typical value is 1.8 k by design.
Battery Protection Circuit
ESD and
Overvoltage
Protection
ESD and
Overvoltage
Protection
*Thermal connection to drain pins is required to achieve specific performance.
See Typical Characteristics,
Gate-Current vs. Gate-Source Voltage, Page 3.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si6924AEDQ-T1 | N-Channel 2.5-V (G-S) Battery Switch, ESD Protection |
| SI6924AEDQ | N-Channel 2.5-V (G-S) Battery Switch, ESD Protection |
| SI6925DQ | Dual N-Channel 2.5-V (G-S) MOSFET |
| SI6925ADQ | Dual N-Channel 2.5-V (G-S) MOSFET |
| SI6926ADQ | Dual N-Channel 2.5-V G-S MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI6924EDQ-T1 | 功能描述:MOSFET 28V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6925ADQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 2.5-V (G-S) MOSFET |
| SI6925ADQ_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 2.5-V (G-S) MOSFET |
| SI6925ADQ-T1-E3 | 功能描述:MOSFET 20V 3.9A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6925ADQ-T1-GE3 | 功能描述:MOSFET 20V 3.9A 1.13W 45mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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