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參數資料
| 型號： | SI5975DC |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 12-V (D-S) MOSFET |
| 中文描述： | 雙P溝道12 V的（副）MOSFET的 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 103K |
| 代理商： | SI5975DC |
Si5975DC
Vishay Siliconix
Document Number: 71320
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
0.086 @ V
GS
= --4.5 V
--4.1
--12
0.127 @ V
GS
= --2.5 V
--3.4
0.164 @ V
GS
= --1.8 V
--3.0
Bottom View
1206-8 ChipFE
T
t
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
1
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Marking Code
DD XX
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si5975DC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
--12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current (T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
--4.1
--3.1
T
A
= 85
_
C
--3.0
--2.2
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
--10
--1.8
--0.9
Maximum Power Dissipation
a
T
A
= 25
_
C
T
A
= 85
_
C
P
D
2.1
1.1
W
1.1
0.6
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
J
, T
stg
--55 to 150
_
C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
≤
5 sec
R
thJA
50
60
Steady State
90
110
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
30
40
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI5975DC-T1 | 功能描述:MOSFET 12V 4.1A 2.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5975DC-T1-E3 | 功能描述:MOSFET 12V 4.1A 2.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5975DC-T1-GE3 | 功能描述:MOSFET 2P-CH 12V 3.1A CHIPFET RoHS:是 類別:分離式半導體產品 >> FET - 陣列 系列:TrenchFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| SI5980DU-T1-GE3 | 功能描述:MOSFET 100V 2.5A 7.8W .567Ohms @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5997DU-T1-GE3 | 功能描述:MOSFET 30V 6A 10.4W 54mOhms @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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