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參數(shù)資料
| 型號： | SI5463EDC |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 散熱片 |
| 英文描述： | Heat Sink; Package/Case:TO-263; Thermal Resistance:18 C/W; Leaded Process Compatible:No; Mounting Type:PCB Surface Mount; Peak Reflow Compatible (260 C):No |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 111K |
| 代理商： | SI5463EDC |
Si5463EDC
Vishay Siliconix
Document Number: 71364
S-21251—Rev. C, 05-Aug-02
www.vishay.com
2-1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
0.062 @ V
GS
= --4.5 V
0.068@ V
GS
= --3.6 V
0.085 @ V
GS
= --2.5 V
0.120 @ V
GS
= --1.8 V
--5.1
--20
--4.9
--4.4
--3.7
1206-8 ChipFE
T
t
D
D
D
G
D
D
D
S
1
Bottom View
Marking Code
LB
XX
Lot Traceability
and Date Code
Part #
Code
S
5.4 k
D
P-Channel MOSFET
G
Ordering Information:
Si5463EDC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
--20
V
Gate-Source Voltage
12
T
A
= 25
_
C
I
D
--5.1
--3.8
Continuous Drain Current (T
J
= 150
_
C)
a
T
A
= 85
_
C
--3.7
--2.7
A
Pulsed Drain Current
Continuous Source Current
a
I
DM
I
S
--15
--1.9
--1.0
Maximum Power Dissipation
a
T
A
= 25
_
C
T
A
= 85
_
C
P
D
2.3
1.25
W
1.2
0.65
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c, d
T
J
, T
stg
--55 to 150
_
C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
≤
5 sec
R
thJA
45
55
Steady State
84
100
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
20
25
Notes
a.
b.
c.
Surface Mounted on 1” x 1” FR4 Board.
When using HBM. The MM rating is 300 V
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI5463EDC-T1 | Heat Sink; Package/Case:D2-Pak (TO-263); Thermal Resistance:18 C/W; Mounting Type:PCB Surface Mount; Length:26.16mm; Height:10.16mm; Width:12.7mm; Color:Tin; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| Si5504DC | Complementary 30-V (D-S) MOSFET |
| SI5513DC | Complementary 20-V (D-S) MOSFET |
| SI5513DC-T1 | Complementary 20-V (D-S) MOSFET |
| SI5513DC-T1-E3 | Complementary 20-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI5463EDC_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI5463EDC-T1 | 功能描述:MOSFET 20V 5.1A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5463EDC-T1-E3 | 功能描述:MOSFET 20V 5.1A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5463EDC-T1-GE3 | 功能描述:MOSFET 20V 5.1A 2.3W 62mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5465EDC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET |
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