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參數(shù)資料
| 型號： | Si5504DC |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Complementary 30-V (D-S) MOSFET |
| 中文描述： | 補充30 V的（副）MOSFET的 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SI5504DC |
Si5504DC
Vishay Siliconix
Document Number: 71056
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.085 @ V
GS
= 10 V
0.143 @ V
GS
= 4.5 V
3.9
N-Channel
30
3.0
0.165 @ V
GS
= -10 V
2.8
P-Channel
-30
0.290 @ V
GS
= -4.5 V
2.1
Bottom View
D
1
G
1
S
1
N-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
1206-8 ChipFE
T
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
1
Marking Code
EA
XX
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si5504DC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
30
-30
Gate-Source Voltage
20
V
T
A
= 25 C
T
A
= 85 C
3.9
2.9
2.8
2.1
Continuous Drain Current
(T
J
= 150 C)
a
I
D
2.8
2.1
2.0
1.5
Pulsed Drain Current
I
DM
I
S
10
A
Continuous Source Current (Diode Conduction)
a
1.8
0.9
-1.8
-0.9
T
A
= 25 C
T
A
= 85 C
2.1
1.1
2.1
1.1
Maximum Power Dissipation
a
P
D
1.1
0.6
1.1
0.6
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
Soldering Recommendations (Peak Temperature)
b, c
260
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
50
60
Maximum Junction-to-Ambient
a
Steady State
R
thJA
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
30
40
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the
singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI5504DC-T1 | 功能描述:MOSFET 30V 3.9/2.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5504DC-T1-E3 | 功能描述:MOSFET 30V 3.9/2.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5504DC-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI5504DC-T1-GE3 | 功能描述:MOSFET N/P-CH 30V CHIPFET 1206-8 RoHS:是 類別:分離式半導體產品 >> FET - 陣列 系列:TrenchFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| SI5509DC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET |
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