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參數(shù)資料
| 型號(hào)： | SI5513DC-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Complementary 20-V (D-S) MOSFET |
| 中文描述： | 補(bǔ)充20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 83K |
| 代理商： | SI5513DC-T1-E3 |
Si5513DC
Vishay Siliconix
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
www.vishay.com
1
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
N Channel
N-Channel
20
0.075 @ V
GS
= 4.5 V
0.134 @ V
GS
= 2.5 V
0.155 @ V
GS
=
4.5 V
0.260 @ V
GS
=
2.5 V
4.2
4
3.1
P Channel
P-Channel
2.9
3
20
2.2
Bottom View
1206-8 ChipFET
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
1
Marking Code
EB
XX
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si5513DC-T1
Si5513DC-T1—E3 (Lead (Pb)-Free)
S
2
G
2
D
2
P-Channel MOSFET
N-Channel MOSFET
G
1
D
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
20
20
V
Gate-Source Voltage
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 85 C
I
D
4.2
3.1
2.9
2.1
3.0
2.2
2.1
1.5
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
10
10
1.8
0.9
1.8
0.9
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 85 C
P
D
2.1
1.1
2.1
1.1
W
1.1
0.6
1.1
0.6
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
J
, T
stg
55 to 150
C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
50
60
Steady State
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
30
40
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI5513DC-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI5513DC-T1-GE3 | 功能描述:MOSFET N/P-CH 20V CHIPFET 1206-8 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:TrenchFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| SI5515CDC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 20 V (D-S) MOSFET |
| SI5515CDC_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 20 V (D-S) MOSFET |
| Si5515CDC-T1-E3 | 功能描述:MOSFET 20V 4.0A 3.1W 36/100mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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