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參數(shù)資料
| 型號(hào)： | SI5902DC |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 111K |
| 代理商： | SI5902DC |
Si5902DC
Vishay Siliconix
Document Number: 71053
S-21251—Rev. A, 05-Aug-02
www.vishay.com
2-7
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
30
0.085 @ V
GS
= 10 V
0.143 @ V
GS
= 4.5 V
3.9
3.0
1206-8 ChipFE
T
t
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
1
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
N-Channel MOSFET
Bottom View
Marking Code
CA
XX
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si5902DC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
3.9
2.8
2.9
2.1
T
A
= 85
_
C
A
Pulsed Drain Current
I
DM
10
Continuous Source Current (Diode Conduction)
a
I
S
1.8
0.9
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.1
1.1
W
T
A
= 85
_
C
1.1
0.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
--55 to 150
_
C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
≤
5 sec
R
thJA
50
60
Steady State
90
110
_
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
30
40
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI5902DC-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI5903DC | Dual P-Channel 2.5-V (G-S) MOSFET |
| SI5903DC-T1 | Dual P-Channel 2.5-V (G-S) MOSFET |
| SI5904DC | Dual N-Channel 2.5-V (G-S) MOSFET |
| Si5904DC-T1 | Dual N-Channel 2.5-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI5902DC-T1 | 功能描述:MOSFET 30V 3.9A 2.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5902DC-T1-E3 | 功能描述:MOSFET 30V 3.9A 2.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5903DC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 2.5-V (G-S) MOSFET |
| SI5903DC_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 2.5-V (G-S) MOSFET |
| SI5903DC-T1 | 功能描述:MOSFET 20V 2.9A 2.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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