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參數(shù)資料
| 型號： | SI5517DU |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 226K |
| 代理商： | SI5517DU |
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
S-52018
Rev. A, 03-Oct-05
1
www.vishay.com
Vishay Siliconix
SPICE Device Model Si5517DU
Document Number: 74130
N- and P-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
N- and P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n- and p-channel vertical DMOS. The
subcircuit
model
is
extracted
55 to 125
°
C temperature ranges under the pulsed 0-V to 10-V gate
drive. The saturated output impedance is best fit at the gate bias
near the threshold voltage.
and
optimized
over
the
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI5517DU_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET |
| SI5517DU-T1-E3 | 功能描述:MOSFET N-AND P-CH 20V(D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5517DU-T1-GE3 | 功能描述:MOSFET 20V 6.0A 8.3W 39/72mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5519DU | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET |
| SI5519DU-T1-E3 | 功能描述:MOSFET 20V 6.0A 10.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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