參數(shù)資料
型號(hào)： SI5463EDC-T1
廠商： Vishay Intertechnology,Inc.
元件分類： 散熱片
英文描述： Heat Sink; Package/Case:D2-Pak (TO-263); Thermal Resistance:18 C/W; Mounting Type:PCB Surface Mount; Length:26.16mm; Height:10.16mm; Width:12.7mm; Color:Tin; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
中文描述： P通道20 - V（下局副局長(zhǎng)）MOSFET的
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 111K
代理商： SI5463EDC-T1
Si5463EDC
Vishay Siliconix
Document Number: 71364
S-21251—Rev. C, 05-Aug-02
www.vishay.com
2-1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
0.062 @ V
GS
= --4.5 V
0.068@ V
GS
= --3.6 V
0.085 @ V
GS
= --2.5 V
0.120 @ V
GS
= --1.8 V
--5.1
--20
--4.9
--4.4
--3.7
1206-8 ChipFE
T
t
D
D
D
G
D
D
D
S
1
Bottom View
Marking Code
LB
XX
Lot Traceability
and Date Code
Part #
Code
S
5.4 k
D
P-Channel MOSFET
G
Ordering Information:
Si5463EDC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
--20
V
Gate-Source Voltage
12
T
A
= 25
_
C
I
D
--5.1
--3.8
Continuous Drain Current (T
J
= 150
_
C)
a
T
A
= 85
_
C
--3.7
--2.7
A
Pulsed Drain Current
Continuous Source Current
a
I
DM
I
S
--15
--1.9
--1.0
Maximum Power Dissipation
a
T
A
= 25
_
C
T
A
= 85
_
C
P
D
2.3
1.25
W
1.2
0.65
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c, d
T
J
, T
stg
--55 to 150
_
C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
≤
5 sec
R
thJA
45
55
Steady State
84
100
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
20
25
Notes
a.
b.
c.
Surface Mounted on 1” x 1” FR4 Board.
When using HBM. The MM rating is 300 V
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI5463EDC-T1-E3 功能描述:MOSFET 20V 5.1A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI5463EDC-T1-GE3 功能描述:MOSFET 20V 5.1A 2.3W 62mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI5465EDC 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET
SI5465EDC-T1 功能描述:MOSFET 12V 7A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI5465EDC-T1-E3 功能描述:MOSFET 12V 7A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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