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參數(shù)資料
| 型號： | SI5461EDC |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 98K |
| 代理商： | SI5461EDC |
Si5461EDC
Vishay Siliconix
Document Number: 71413
S-21251—Rev. C, 05-Aug-02
www.vishay.com
2-1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
0.045 @ V
GS
= --4.5 V
--6.2
--20
0.060 @ V
GS
= --2.5 V
0.082 @ V
GS
= --1.8 V
--5.4
--4.6
1206-8 ChipFE
T
t
D
D
D
G
D
D
D
S
1
Bottom View
Marking Code
LA
XX
Lot Traceability
and Date Code
Part #
Code
S
5.4 k
D
P-Channel MOSFET
G
Ordering Information:
Si5461EDC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
--20
V
Gate-Source Voltage
12
T
A
= 25
_
C
I
D
--6.2
--4.5
Continuous Drain Current (T
J
= 150
_
C)
a
T
A
= 85
_
C
--4.5
--3.2
A
Pulsed Drain Current
Continuous Source Current
a
I
DM
I
S
--20
--2.1
--1.1
Maximum Power Dissipation
a
T
A
= 25
_
C
T
A
= 85
_
C
P
D
2.5
1.3
W
1.3
0.7
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c, d
T
J
, T
stg
--55 to 150
_
C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
≤
5 sec
R
thJA
40
50
Steady State
80
95
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
20
Notes
a.
b.
c.
Surface Mounted on 1” x 1” FR4 Board.
When using HBM. The MM rating is 300 V.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI5461EDC-T1 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI5463EDC | Heat Sink; Package/Case:TO-263; Thermal Resistance:18 C/W; Leaded Process Compatible:No; Mounting Type:PCB Surface Mount; Peak Reflow Compatible (260 C):No |
| SI5463EDC-T1 | Heat Sink; Package/Case:D2-Pak (TO-263); Thermal Resistance:18 C/W; Mounting Type:PCB Surface Mount; Length:26.16mm; Height:10.16mm; Width:12.7mm; Color:Tin; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| Si5504DC | Complementary 30-V (D-S) MOSFET |
| SI5513DC | Complementary 20-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI5461EDC-T1 | 功能描述:MOSFET 20V 6.2A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5461EDC-T1-E3 | 功能描述:MOSFET 20V 6.2A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5461EDC-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:MOSFET; P-CH, 20V(D-S) 45MOHM CHIPFET |
| SI5461EDC-T1-GE3 | 功能描述:MOSFET 20V 6.2A 2.5W 45mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5463EDC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
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