參數(shù)資料
型號(hào): Si4980DY-T1
廠商: Vishay Intertechnology,Inc.
英文描述: Dual N-Channel 80-V (D-S) MOSFET
中文描述: 雙N溝道80 - V(下局副局長)MOSFET的
文件頁數(shù): 4/4頁
文件大?。?/td> 39K
代理商: SI4980DY-T1
Si4980DY
Vishay Siliconix
www.vishay.com
2-4
Document Number: 70646
S-03950—Rev. D, 26-May-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
-
r
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
I
T
J
- Temperature ( C)
Time (sec)
P
0.00
0.05
0.10
0.15
0.20
0
2
4
6
8
10
-1.0
-0.5
0.0
0.5
1.0
-50
-25
0
25
50
75
100
125
150
T
J
= 150 C
T
J
= 25 C
I
D
= 3.7 A
I
D
= 250 A
V
V
20
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.01
10
20
30
40
50
0.10
1.00
10.00
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
10
30
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
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