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參數(shù)資料
| 型號： | Si4992EY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 75-V (D-S) MOSFET |
| 中文描述： | 雙N溝道75 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 64K |
| 代理商： | SI4992EY |
FEATURES
D
TrenchFET
r
Power MOSFET
D
175
_
C Maximum Junction Temperature
D
High-Efficiency PWM Optimized
APPLICATIONS
D
Automotive Such As:
--
High-Side Switch
--
Motor Drives
--
42-V Battery
Si4992EY
Vishay Siliconix
New Product
Document Number: 73082
S-41640—Rev. A, 06-Sep-04
www.vishay.com
1
Dual N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
75
0.048 @ V
GS
= 10 V
0.062 @ V
GS
= 4.5 V
4.8
4.2
SO-8
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
5
6
7
8
Top View
2
3
4
1
D
1
G
1
S
1
N-Channel MOSFET
Ordering Information:
Si4992EY—E3
Si4992EY-T1—E3 (with Tape and Reel)
D
2
G
2
S
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
75
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 175
_
C)
a
T
A
= 25
_
C
I
D
4.8
3.6
T
A
= 85
_
C
3.7
2.8
Continuous Source Current
a
I
S
2
1.1
A
Pulsed Drain Current
I
DM
20
Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
8
Single Avalanche Energy (Duty Cycle
≤
1%)
E
AS
3.2
mJ
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.4
1.4
W
T
A
= 85
_
C
1.4
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
--55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
≤
10 sec
R
thJA
50
62.5
Steady State
85
110
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
31
37
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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| SI4992EY_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 75-V (D-S) MOSFET |
| SI4992EY-T1-E3 | 功能描述:MOSFET DUAL N-CH 75V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4992EY-T1-GE3 | 功能描述:MOSFET 75V 4.8A 2.4W 48mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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