- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365550 > Si4888DY (Vishay Intertechnology,Inc.) N-Channel Reduced Qg, Fast-Switching MOSFET PDF資料下載
參數(shù)資料
| 型號： | Si4888DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Reduced Qg, Fast-Switching MOSFET |
| 中文描述： | N溝道低Qg，快速開關(guān)MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SI4888DY |
Si4888DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71336
S-03662—Rev. D, 14-Apr-03
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.80
1.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
1
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 70 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
40
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 16 A
0.0058
0.007
V
GS
= 4.5 V, I
D
= 13 A
0.008
0.010
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 16 A
38
S
Diode Forward Voltage
a
V
SD
I
S
= 3 A, V
GS
= 0 V
0.74
1.1
V
Dynamic
b
Total Gate Charge
Q
g
16.3
24
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 5.0 V, I
D
= 16 A
4
nC
Gate-Drain Charge
Q
gd
5.9
Gate Resistance
R
G
0.5
1.5
2.6
Turn-On Delay Time
t
d(on)
14
20
Rise Time
t
r
DD
L
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
10
15
Turn-Off Delay Time
t
d(off)
I
D
44
70
ns
Fall Time
t
f
20
30
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3 A, di/dt = 100 A/ s
40
70
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
10
20
30
40
50
0
2
4
6
8
10
V
GS
= 10 thru 3 V
25 C
T
C
= 125 C
1 V
-55 C
2 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4890DY | N-Channel Reduced Qg; Fast-Switching MOSFET |
| SI4892DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4894DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4894DY | N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
| SI4900DY | N-Channel 60-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4888DY-E3 | 功能描述:MOSFET 30V 16A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4888DY-T1 | 功能描述:MOSFET 30V 16A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4888DY-T1-E3 | 功能描述:MOSFET 30V 16A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4888DY-T1-GE3 | 功能描述:MOSFET 30V 16A 3.5W 7.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| Si4890BDY-T1-E3 | 功能描述:MOSFET 30V 16A 5.7W 12mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。