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參數(shù)資料
| 型號(hào)： | SI4836DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 12-V (D-S) MOSFET |
| 中文描述： | N通道12V（D-S）MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | SI4836DY |
Si4836DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71692
S-03662—Rev. D, 14-Apr-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.40
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 9.6 V, V
GS
= 0 V
1
A
V
DS
= 9.6 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 4.5
V
5
On-State Drain Current
a
I
D(on)
V
DS
30
A
V
GS
= 4.5
V, I
D
= 25 A
0.0025
0.003
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 22 A
0.0031
0.004
V
GS
= 1.8 V, I
D
= 19 A
0.004
0.005
Forward Transconductance
a
g
fs
V
DS
= 6 V, I
D
= 25 A
80
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.56
1.1
V
Dynamic
b
Total Gate Charge
Q
g
51
75
Gate-Source Charge
Q
gs
V
DS
= 6 V,
V
GS
= 4.5 V, I
D
= 25 A
6.6
nC
Gate-Drain Charge
Q
gd
9.1
Gate Resistance
R
G
1.0
1.6
2.7
Turn-On Delay Time
t
d(on)
35
55
Rise Time
t
r
V
DD
= 6 V, R
L
= 6
1 A, V
GEN
= 10 V, R
G
= 6
41
65
Turn-Off Delay Time
t
d(off)
I
D
190
290
ns
Fall Time
t
f
115
175
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
60
90
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 5 thru 1.5 V
25 C
T
C
= 125 C
-55 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4836DY-E3 | 功能描述:MOSFET 12V 13A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4836DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 12V 17A 8-Pin SOIC N T/R |
| SI4836DY-T1-E3 | 功能描述:MOSFET 12 Volt 13 Amp 1.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4836DY-T1-GE3 | 功能描述:MOSFET 12V 25A 3.5W 3.0mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4837DY | 功能描述:MOSFET 30V 8.3A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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