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參數(shù)資料
| 型號： | SI4804DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 32K |
| 代理商： | SI4804DY |
Specification Comparison
Vishay Siliconix
Document Number: 72893
22-Mar-04
www.vishay.com
1
Si4804BDY vs. Si4804DY
Description:
Package:
Pin Out:
Dual N-Channel, 30-V (D-S) MOSFET
SOIC-8
Identical
Part Number Replacements:
Si4804BDY Replaces Si4804DY
Si4804BDY—E3 (Lead Free version) Replaces Si4804DY
Si4804BDY-T1 Replaces Si4804DY-T1
Si4804BDY-T1—E3 (Lead Free version) Replaces Si4804DY-T1
Summary of Performance:
The Si4804BDY is the replacement for the original Si4804DY; both parts perform identically including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4804BDY
Si4804DY
Unit
Drain-Source Voltage
V
DS
V
GS
30
30
V
Gate-Source Voltage
20
20
Continuous Drain Current
T
A
= 25 C
T
A
= 70 C
I
D
7.5
6
30
2.3
1.7
2.0
7.5
6
20
1.7
2.0
1.3
A
Pulsed Drain Current
Continuous Source Current (MOSFET Diode Conduction)
I
DM
I
S
Power Dissipation
T
A
= 25 C
T
A
= 70 C
P
D
W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
T
j
and T
stg
R
thJA
55 to 150
62.5
55 to 150
62.5
C
C/W
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Si4804BDY
Si4804DY
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Static
Gate-Threshold Voltage
V
G(th)
I
GSS
I
DSS
I
D(on)
0.8
3.0
0.8
V
Gate-Body Leakage
100
100
nA
Zero Gate Voltage Drain Current
On-State Drain Current
1
1
A
A
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
20
20
Drain Source On Resistance
Drain-Source On-Resistance
D (
r
Ds(on)
0.017
0.024
19
0.75
0.022
0.030
0.018
0.024
22
0.8
0.022
0.030
Forward Transconductance
Diode Forward Voltage
g
fs
V
SD
S
V
1.2
1.2
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Qg
Qgs
Qgd
R
g
7
11
13
2
2.7
NS
20
2.9
2.5
1.5
nC
0.5
2.6
Turn-On Time
t
d(on)
t
r
t
d(off)
t
f
t
rr
9
10
19
9
35
15
17
30
15
55
8
10
21
10
40
16
20
40
20
80
Turn Off Time
Turn-Off Time
ns
Source-Drain Reverse Recovery Time
NS denotes parameter not specified in original data sheet.
相關PDF資料 |
PDF描述 |
|---|---|
| Si4804DY-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4808DY-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4808DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4818DY-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4818DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4804DY-E3 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4804DY-T1 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4804DY-T1-E3 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4806DY | 功能描述:MOSFET 30V 7.7/2A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4807DY | 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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