參數(shù)資料
型號(hào)： SI4500DY
廠商： Vishay Intertechnology,Inc.
英文描述： Complementary MOSFET Half-Bridge (N- and P-Channel)
中文描述： 互補(bǔ)MOSFET的半橋（N溝道和P溝道）
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 78K
代理商： SI4500DY
FEATURES
TrenchFET Power MOSFET
Si4500BDY
Vishay Siliconix
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
www.vishay.com
1
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
N Channel
N-Channel
20
0.020 @ V
GS
= 4.5 V
0.030 @ V
GS
= 2.5 V
0.060 @ V
GS
=
4.5 V
0.100 @ V
GS
=
2.5 V
9.1
7.5
P Channel
P-Channel
5.3
20
4.1
S
1
D
G
1
D
S
2
D
G
2
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
2
G
2
G
1
S
1
D
Ordering Information:
Si4500BDY
Si4500BDY-T1 (with Tape and Reel)
Si4500BDY—E3 (Lead (Pb)-Free)
Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 sec.
Steady State
10 sec.
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
20
20
V
Gate-Source Voltage
12
12
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
T
A
= 70 C
I
D
9.1
6.6
5.3
3.8
7.3
5.3
4.9
3.1
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
30
20
2.1
1.1
2.1
1.1
Maximum Power Dissipation
a, b
T
A
= 25 C
T
A
= 70 C
P
D
2.5
1.3
2.5
1.3
W
1.6
0.8
1.6
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
N-Channel
P- Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
40
50
41
50
Steady-State
75
95
75
95
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
20
22
23
26
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4500DY-E3 功能描述:MOSFET 20V 7/4.5A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4500DY-T1 功能描述:MOSFET 20V 7/4.5A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4500DY-T1-E3 功能描述:MOSFET 20V 7/4.5A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4501ADY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary (N- and P-Channel) MOSFET Half-Bridge
SI4501ADY-E3 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP
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