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參數(shù)資料
| 型號： | SI4539ADY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | N- and P-Channel 30-V (D-S) MOSFET |
| 中文描述： | N和P溝道30V的（D-S）MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SI4539ADY-T1 |
Si4539ADY
Vishay Siliconix
Document Number: 71131
S-03951—Rev. B, 26-May-03
www.vishay.com
2-1
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
N-Channel
30
0.036 @ V
GS
= 10 V
5.9
0.053 @ V
GS
= 4.5 V
4.9
P Channel
P-Channel
-30
0.053 @ V
GS
= -10 V
-4.9
0.090 @ V
GS
= -4.5 V
-3.7
D
1
G
1
S
1
N-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4539ADY
Si4539ADY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
-30
V
Gate-Source Voltage
V
GS
20
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
5.9
4.4
-4.9
-3.7
T
A
= 70 C
4.7
3.6
-3.9
-2.9
A
Pulsed Drain Current
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
1.7
0.9
-1.7
-0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
2
1.1
W
T
A
= 70 C
1.3
0.7
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
50
62.5
52
62.5
Steady State
90
110
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
32
40
32
40
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
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|---|---|
| SI4539ADY | N- and P-Channel 30-V (D-S) MOSFET |
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| SI4539DY | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| SI4544DY | N- and P-Channel 30-V (D-S) MOSFET |
| SI4558DY | N- and P-Channel 30-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4539ADY-T1-E3 | 功能描述:MOSFET 30V 5.9/4.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4539ADY-T1-GE3 | 功能描述:MOSFET 30V 5.9/4.9A 2.0W 36/53mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4539DY | 功能描述:MOSFET SO8 COMP RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4539DY_Q | 功能描述:MOSFET SO8 COMP RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4539DY-E3 | 功能描述:MOSFET 30V 5.9/4.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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