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參數(shù)資料
| 型號： | SI4501DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Complementary MOSFET Half-Bridge (N- and P-Channel) |
| 中文描述： | 互補(bǔ)MOSFET的半橋（N溝道和P溝道） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 58K |
| 代理商： | SI4501DY |
Si4501DY
Vishay Siliconix
New Product
Document Number: 70934
S-61812—Rev. B, 19-Jul-99
www.vishay.com
2-1
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
N Channel
N-Channel
30
0.018 @ V
GS
= 10 V
0.027 @ V
GS
= 4.5 V
0.042 @ V
GS
= -4.5 V
0.060 @ V
GS
= -2.5 V
9
7.4
P Channel
P-Channel
6.2
-8
5.2
S
1
D
G
1
D
S
2
D
G
2
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
2
G
2
G
1
S
1
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
V
DS
V
GS
30
-8
V
Gate-Source Voltage
20
8
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
T
A
= 70 C
I
D
9
6.2
7.4
5.0
A
Pulsed Drain Current
I
DM
I
S
30
20
Continuous Source Current (Diode Conduction)
a, b
1.7
-1.7
Maximum Power Dissipation
a, b
T
A
= 25 C
T
A
= 70 C
P
D
2.5
W
1.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
N-Channel
P- Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
38
50
40
50
Steady-State
73
95
73
95
C/W
Maximum Junction-to-Foot
Steady-State
R
thJC
17
22
20
26
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4501DY-E3 | 功能描述:MOSFET 30/8V 9/6.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4501DY-T1 | 功能描述:MOSFET 30/8 9/6.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4501DY-T1-E3 | 功能描述:MOSFET 30/8 9/6.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4503DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel MOSFET |
| SI4505DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel MOSFET |
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