參數(shù)資料
型號: SI4493DY
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel 2.5-V (G-S) MOSFET
中文描述: P通道的2.5 V(GS)的MOSFET的
文件頁數(shù): 1/5頁
文件大?。?/td> 44K
代理商: SI4493DY
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switch
Si4493DY
Vishay Siliconix
New Product
Document Number: 72256
S-31420—Rev. A, 07-Jul-03
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-20
0.00775 @ V
GS
= -4.5 V
-14
0.01225 @ V
GS
= -2.5 V
-11
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
Ordering Information:
Si4493DY
Si4493DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-14
-10
T
A
= 70 C
-11
-8
A
Pulsed Drain Current
I
DM
-50
continuous Source Current (Diode Conduction)
a
I
S
-2.7
-1.36
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.0
1.5
W
T
A
= 70 C
1.9
0.95
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
33
42
Steady State
70
84
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
16
21
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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