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參數(shù)資料
| 型號： | Si4511DY-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 77K |
| 代理商： | SI4511DY-E3 |
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Level Shift
Load Switch
Si4511DY
Vishay Siliconix
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
N Channel
N-Channel
20
0.0145 @ V
GS
= 10 V
0.017 @ V
GS
= 4.5 V
0.033 @ V
GS
=
4.5 V
0.050 @ V
GS
=
2.5 V
9.6
8.6
P Channel
P-Channel
6.2
20
5
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
2
G
2
G
1
S
1
D
2
D
1
Ordering Information:
Si4511DY
Si4511DY-T1 (with Tape and Reel)
Si4511DY—E3 (Lead (Pb)-Free)
Si4511DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 sec.
Steady State
10 sec.
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
20
20
V
Gate-Source Voltage
16
12
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
T
A
= 70 C
I
D
9.6
7.2
6.2
4.6
7.7
5.8
4.9
3.7
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
40
40
1.7
0.9
1.7
0.9
Maximum Power Dissipation
a, b
T
A
= 25 C
T
A
= 70 C
P
D
2
1.1
2
1.1
W
1.3
0.7
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
N-Channel
P- Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
50
62.5
50
62.5
Steady-State
85
110
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
30
40
30
35
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4511DY-T1 | 制造商:Vishay Siliconix 功能描述: |
| SI4511DY-T1-E3 | 功能描述:MOSFET +20/-20V +9.6/-6.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4511DY-T1-GE3 | 功能描述:MOSFET 20V 9.6/6.2A 2.0W 14.5/33mohm@10/4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4532ADY | 功能描述:MOSFET 30V 4.9/3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4532ADY | 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NP SO-8 |
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