參數(shù)資料
型號： SI4702DY-T1
廠商： Vishay Intertechnology,Inc.
英文描述： Load Switch with Level-Shift
中文描述： 負(fù)載開關(guān)，移
文件頁數(shù)： 1/4頁
文件大小： 56K
代理商： SI4702DY-T1
Si4702DY
Vishay Siliconix
Document Number: 71293
S-31874—Rev. E, 15-Sep-03
www.vishay.com
1
Load Switch with Level-Shift
PRODUCT SUMMARY
V
DS2
(V)
r
DS(on)
( )
I
D
(A)
30
0.024 @ V
GS2
= 10 V
0.035 @ V
GS2
= 4.5 V
5.5
4.5
S
2
V
IN
V
ON/OFF
S
1
1
5, 6, 7
8
2
Q1
Q2
3, 4
SO-8
S
1
V
HV
V
ON/OFF
V
IN
S
2
V
IN
S
2
V
IN
5
6
7
8
Top View
2
3
4
1
V
HV
Ordering Information:
Si4702DY
Si4702DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Input Voltage
V
IN
V
HV
30
Q2 Gate-Drive Voltage Referenced to S1 or S2
20
V
ON/OFF Voltage
V
ON/OFF
8
Load Current
Continuous
a
Pulsed
b
I
L
5.5
20
A
Continuous Intrinsic Diode Conduction
a
Maximum Power Dissipation
a
I
S
P
D
-1.15
1.25
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
ESD
-55 to 150
C
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 )
3
kV
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (t = steady state)
a
R
thJA
83
100
C/W
Maximum Junction-to-Foot (Q2)
R
thJC
25
30
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF Characteristics
Reverse Leakage Current
I
FL
V
SD
V
IN
= 30 V, V
ON/OFF
= 0 V, V
HV
= 0 V
I
S
= -1.15 A
1
A
Diode Forward Voltage
0.7
1
V
ON Characteristics
On Resistance (Q2)
On-Resistance (Q2)
r
DS(on)
V
ON/OFF
= 0 V, I
D
= 5.5 A, V
HV
= 10 V, V
S2
= 0 V
V
ON/OFF
= 0 V, I
D
= 4.5 A, V
HV
= 4.5 V, V
S2
= 0 V
V
IN
- V
OUT
0.1 V, V
IN
= 5 V, V
ON/OFF
= 0 V V
HV
= 10 V
0.019
0.024
0.028
0.035
On-State (Q2) Drain-Current
I
D(on)
15
A
Notes
a.
b.
Surface Mounted on FR4 Board.
Pulse test: pulse width
300 s, duty cycle
2%.
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