參數(shù)資料
型號(hào)： Si4511DY-T1
廠商： Vishay Intertechnology,Inc.
英文描述： Paired Cable; Number of Conductors:18; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:9; Voltage Nom.:300V RoHS Compliant: Yes
中文描述： N和P溝道20 - V（下局副局長）MOSFET的
文件頁數(shù)： 1/8頁
文件大小： 77K
代理商： SI4511DY-T1
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Level Shift
Load Switch
Si4511DY
Vishay Siliconix
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
N Channel
N-Channel
20
0.0145 @ V
GS
= 10 V
0.017 @ V
GS
= 4.5 V
0.033 @ V
GS
=
4.5 V
0.050 @ V
GS
=
2.5 V
9.6
8.6
P Channel
P-Channel
6.2
20
5
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
2
G
2
G
1
S
1
D
2
D
1
Ordering Information:
Si4511DY
Si4511DY-T1 (with Tape and Reel)
Si4511DY—E3 (Lead (Pb)-Free)
Si4511DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 sec.
Steady State
10 sec.
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
20
20
V
Gate-Source Voltage
16
12
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
T
A
= 70 C
I
D
9.6
7.2
6.2
4.6
7.7
5.8
4.9
3.7
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
40
40
1.7
0.9
1.7
0.9
Maximum Power Dissipation
a, b
T
A
= 25 C
T
A
= 70 C
P
D
2
1.1
2
1.1
W
1.3
0.7
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
N-Channel
P- Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
50
62.5
50
62.5
Steady-State
85
110
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
30
40
30
35
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec
相關(guān)PDF資料
PDF描述
SI4511DY P-Channel 20-V (D-S) MOSFET,Low-Threshold
Si4511DY-E3 P-Channel 20-V (D-S) MOSFET,Low-Threshold
Si4511DY-T1-E3 P-Channel 20-V (D-S) MOSFET,Low-Threshold
SI4702DY Load Switch with Level-Shift
SI4702DY-T1 Load Switch with Level-Shift
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4511DY-T1-E3 功能描述:MOSFET +20/-20V +9.6/-6.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4511DY-T1-GE3 功能描述:MOSFET 20V 9.6/6.2A 2.0W 14.5/33mohm@10/4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4532ADY 功能描述:MOSFET 30V 4.9/3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4532ADY 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NP SO-8
SI4532ADY-E3 功能描述:MOSFET 30V 4.9/3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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